1. komponenta

Lecture type	Total
Lectures	30
Exercises	15

* Load is given in academic hour (1 academic hour = 45 minutes)

COURSE GOALS: To acquire detailed physical understanding of the (un)doped semiconductors materials, its microscopic description, electrical properties, together with the solid state devices based on silicon/germanium doped semiconductors (np diode, field effect transistors, bipolar junction transistors, opamp in integrated circuits).

LEARNING OUTCOMES AT THE LEVEL OF THE PROGRAMME:
1. KNOWLEDGE AND UNDERSTANDING
1.2 demonstrate a thorough knowledge of advanced methods of theoretical physics including classical mechanics, classical electrodynamics, statistical physics and quantum physics
1.3 demonstrate a thorough knowledge of the most important physics theories (logical and mathematical structure, experimental support, described physical phenomena)

LEARNING OUTCOMES SPECIFIC FOR THE COURSE:
By finishing this course, student will:
- be able to qualitatively and quantitatively describe physical properties of intrinsic and doped semiconductor materials
- be able to quantitatively describe microscopic parameters of semiconductor (energy bands, Fermi energy, density of states)
- understand physical background of electrical current conduction (n- and p- type semiconductors and metals; conductivity, resistivity, carrier mobility)
- know how selected semiconductor devices work (np diode, BTJ, FET)
- be able to quantitatively describe various electrical circuits (RC-amplifier with FET/BJT, differential amplifier; definition and importance of CMMR; opamp; basic logical DTL, RTL and TTL circuits)
- be able to quantitatively describe properties of multistage circuits and feedback circuits
COURSE DESCRIPTION:
Basic semiconductor physics (crystal structure, energy bands, Kronig-Penney model); Concept of Fermi energy (conductors, semiconductors, insulators, energy gap, quasiparticles: electrons and holes, density of states); Temperature dependence of the properties of semiconductors (electrical conductivity, mobility diffusion of carriers); np diode; Transistors (JFET, BJT); RC-amplifiers; Multistage amplifiers; Feedback; Opamps; Basic circuits in digital electronics.
REQUIREMENTS FOR STUDENTS:
Knowledge of complex numbers, basics of quantum physics, and basic differential and integral analysis.
GRADING AND ASSESSING THE WORK OF STUDENTS:
The final exam consists of written and oral examinations, final score is the average value of grades obtained on each of them. Additional points can be achieved by successful solving homework assignments. Written exam can be replaced by a successful solving of two colloquiums.

1. A.S.Grove, Physics and Technology of Semiconductor Devices, Wiley & Sons Inc., NY 1967.
   D.J.Roulston, An Introduction to the Physics of Semiconductor Devices, Oxford Press 1999
   J.Millman and A.Grabel, Microelectronics, McGraw-Hill, New York 1988.
2. S.M. Sze, Physics of Semiconductor Devices, Wiley & Sons Inc., NY 1981.
   A. Sedra, K.C.Smith, Microelectronic circuits, Oxford University Press, 1998

Enrollment :
Attended : General Physics 4

Examination :
Passed : General Physics 4

Mandatory course - Regular study - Physics